HGT1S5N120BNS9A
vs
HGTG30N60C3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW CONDUCTION LOSS, AVALANCHE RATED
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
21 A
63 A
Collector-Emitter Voltage-Max
1200 V
600 V
Configuration
SINGLE
SINGLE
Fall Time-Max (tf)
200 ns
275 ns
Gate-Emitter Voltage-Max
20 V
20 V
JEDEC-95 Code
TO-263AB
TO-247
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
167 W
208 W
Qualification Status
Not Qualified
Not Qualified
Rise Time-Max (tr)
20 ns
Surface Mount
YES
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
MOTOR CONTROL
MOTOR CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
357 ns
550 ns
Turn-on Time-Nom (ton)
35 ns
85 ns
Base Number Matches
1
3
Gate-Emitter Thr Voltage-Max
6 V
Compare HGT1S5N120BNS9A with alternatives
Compare HGTG30N60C3 with alternatives