HGT1S3N60B3S vs HGT1S3N60B3S9A feature comparison

HGT1S3N60B3S Harris Semiconductor

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HGT1S3N60B3S9A Intersil Corporation

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR INTERSIL CORP
Package Description PLASTIC PACKAGE-4 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 7 A 7 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 33 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 220 ns 335 ns
Turn-on Time-Nom (ton) 16 ns 34 ns
Base Number Matches 4 3

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