HGT1S3N60B3S9A vs HGTP2N120CN feature comparison

HGT1S3N60B3S9A Intersil Corporation

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HGTP2N120CN Harris Semiconductor

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 7 A 2 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 335 ns
Turn-on Time-Nom (ton) 34 ns
Base Number Matches 3 4

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