HGT1S20N35G3VL
vs
HGT1S20N35G3VL
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERSIL CORP
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
20 A
20 A
Collector-Emitter Voltage-Max
380 V
320 V
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-Emitter Thr Voltage-Max
2.3 V
2.3 V
Gate-Emitter Voltage-Max
10 V
12 V
JEDEC-95 Code
TO-262AA
TO-262AA
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
150 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
AUTOMOTIVE IGNITION
AUTOMOTIVE IGNITION
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
3
Part Package Code
TO-262AA
Package Description
TO-262AA, 3 PIN
Pin Count
3
Turn-off Time-Nom (toff)
15000 ns
Compare HGT1S20N35G3VL with alternatives
Compare HGT1S20N35G3VL with alternatives