Part Details for HGT1S20N35G3VL by Fairchild Semiconductor Corporation
Overview of HGT1S20N35G3VL by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
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Energy and Power Systems
Renewable Energy
Part Details for HGT1S20N35G3VL
HGT1S20N35G3VL CAD Models
HGT1S20N35G3VL Part Data Attributes
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HGT1S20N35G3VL
Fairchild Semiconductor Corporation
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Datasheet
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HGT1S20N35G3VL
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-262AA, TO-262AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-262AA | |
| Package Description | TO-262AA, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 320 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| Gate-Emitter Thr Voltage-Max | 2.3 V | |
| Gate-Emitter Voltage-Max | 12 V | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | AUTOMOTIVE IGNITION | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 15000 ns |
Alternate Parts for HGT1S20N35G3VL
This table gives cross-reference parts and alternative options found for HGT1S20N35G3VL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S20N35G3VL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HGTP20N35G3VL | Intersil Corporation | Check for Price | 20A, N-CHANNEL IGBT, TO-220AB | HGT1S20N35G3VL vs HGTP20N35G3VL |
| HGTP20N35G3VL | Fairchild Semiconductor Corporation | Check for Price | Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | HGT1S20N35G3VL vs HGTP20N35G3VL |