HGT1S20N35G3VL
vs
HGT1S20N35G3VL
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
INTERSIL CORP
|
| Part Package Code |
TO-262AA
|
|
| Package Description |
TO-262AA, 3 PIN
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
20 A
|
20 A
|
| Collector-Emitter Voltage-Max |
320 V
|
380 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
| Gate-Emitter Thr Voltage-Max |
2.3 V
|
2.3 V
|
| Gate-Emitter Voltage-Max |
12 V
|
10 V
|
| JEDEC-95 Code |
TO-262AA
|
TO-262AA
|
| JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
150 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
AUTOMOTIVE IGNITION
|
AUTOMOTIVE IGNITION
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
15000 ns
|
|
| Base Number Matches |
3
|
3
|
|
|
|
Compare HGT1S20N35G3VL with alternatives
Compare HGT1S20N35G3VL with alternatives