HGT1S12N60C3DRS9A vs IRG4BC30SPBF feature comparison

HGT1S12N60C3DRS9A Harris Semiconductor

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IRG4BC30SPBF International Rectifier

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G3 LEAD FREE PACKAGE-3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 24 A 34 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
JESD-30 Code R-PSSO-G3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 290 ns 1550 ns
Turn-on Time-Nom (ton) 36 ns 40 ns
Base Number Matches 3 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-220AB
Pin Count 3
Fall Time-Max (tf) 590 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-609 Code e3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 100 W
Terminal Finish MATTE TIN OVER NICKEL

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