HGT1S12N60C3DRS9A vs HGTG18N120BN_NL feature comparison

HGT1S12N60C3DRS9A Intersil Corporation

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HGTG18N120BN_NL Fairchild Semiconductor Corporation

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Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERSIL CORP FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS, AVALANCHE RATED
Case Connection COLLECTOR
Collector Current-Max (IC) 24 A 54 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 400 ns 200 ns
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-247
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W 390 W
Qualification Status Not Qualified Not Qualified
Rise Time-Max (tr) 38 ns 22 ns
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 540 ns 345 ns
Turn-on Time-Nom (ton) 74 ns 38 ns
Base Number Matches 3 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare HGT1S12N60C3DRS9A with alternatives

Compare HGTG18N120BN_NL with alternatives