HER301G vs 1N5809URSE3 feature comparison

HER301G International Semiconductor Inc

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1N5809URSE3 Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-201AD
JESD-30 Code O-PALF-W2 O-LELF-R2
Non-rep Pk Forward Current-Max 150 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Reverse Recovery Time-Max 0.05 µs 0.03 µs
Surface Mount NO YES
Terminal Form WIRE WRAP AROUND
Terminal Position AXIAL END
Base Number Matches 23 1
Rohs Code Yes
Package Description ROHS COMPLIANT, HERMETIC SEALED, GLASS, B, MELF-2
Additional Feature HIGH RELIABILITY
Forward Voltage-Max (VF) 0.875 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 100 V
Reverse Current-Max 5 µA
Technology AVALANCHE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare 1N5809URSE3 with alternatives