1N5809URSE3
vs
EGP30B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
GALAXY SEMI-CONDUCTOR CO LTD
Package Description
ROHS COMPLIANT, HERMETIC SEALED, GLASS, B, MELF-2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY
Application
ULTRA FAST RECOVERY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.875 V
0.95 V
JESD-30 Code
O-LELF-R2
O-PALF-W2
Non-rep Pk Forward Current-Max
125 A
125 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
125 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
5 µA
5 µA
Reverse Recovery Time-Max
0.03 µs
0.05 µs
Surface Mount
YES
NO
Technology
AVALANCHE
Terminal Form
WRAP AROUND
WIRE
Terminal Position
END
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
19
JEDEC-95 Code
DO-27
Reverse Test Voltage
100 V
Compare 1N5809URSE3 with alternatives
Compare EGP30B with alternatives