HER102 vs SS1H10LW feature comparison

HER102 Galaxy Microelectronics

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SS1H10LW Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-41
Reach Compliance Code unknown unknown
ECCN Code EAR99
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 0.8 V
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2 R-PDSO-F2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.05 µs
Surface Mount NO YES
Terminal Form WIRE FLAT
Terminal Position AXIAL DUAL
Base Number Matches 44 1
Package Description SOD-123W, 2 PIN
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature LOW POWER LOSS
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Reverse Current-Max 0.5 µA
Technology SCHOTTKY
Terminal Finish Matte Tin (Sn)

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