HAT2220R-EL-E
vs
FW276-TL-2H
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
ONSEMI
|
| Part Package Code |
SOP
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
|
| Pin Count |
8
|
|
| Manufacturer Package Code |
PRSP0008DD
|
751CR
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Renesas Electronics
|
onsemi
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
450 V
|
|
| Drain Current-Max (ID) |
0.7 A
|
|
| Drain-source On Resistance-Max |
6.5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
R-PDSO-G8
|
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
2
|
|
| Number of Terminals |
8
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
3 W
|
|
| Pulsed Drain Current-Max (IDM) |
2.1 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
20
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
4 Weeks
|
| JESD-609 Code |
|
e3
|
| Terminal Finish |
|
TIN
|
|
|
|