HAT2166H-EL-E vs HAT2099H-EL-E feature comparison

HAT2166H-EL-E Renesas Electronics Corporation

Buy Now Datasheet

HAT2099H-EL-E Renesas Electronics Corporation

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP RENESAS TECHNOLOGY CORP
Part Package Code LFPAK LFPAK
Package Description SMALL OUTLINE, R-PSSO-G4 SC-100, LFPAK-5
Pin Count 5 5
Manufacturer Package Code PTZZ0005DA PTZZ0005DA
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Renesas Electronics Renesas Electronics
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 45 A 50 A
Drain-source On Resistance-Max 0.0061 Ω 0.0073 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4 R-PSSO-G4
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 25 W 30 W
Pulsed Drain Current-Max (IDM) 180 A 200 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 20 20
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare HAT2166H-EL-E with alternatives

Compare HAT2099H-EL-E with alternatives