HAT2099H-EL-E vs BSC052N03SG feature comparison

HAT2099H-EL-E Renesas Electronics Corporation

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BSC052N03SG Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP INFINEON TECHNOLOGIES AG
Part Package Code LFPAK
Package Description SC-100, LFPAK-5 GREEN, PLASTIC, TDSON-8
Pin Count 5 8
Manufacturer Package Code PTZZ0005DA
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 50 A 18 A
Drain-source On Resistance-Max 0.0073 Ω 0.0082 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4 R-PDSO-F8
Moisture Sensitivity Level 1 3
Number of Elements 1 1
Number of Terminals 4 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 30 W 54 W
Pulsed Drain Current-Max (IDM) 200 A 200 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) 20
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 168 mJ
JESD-609 Code e3
Terminal Finish MATTE TIN

Compare HAT2099H-EL-E with alternatives

Compare BSC052N03SG with alternatives