HAT2096H vs HAT2165H-EL-E feature comparison

HAT2096H Renesas Electronics Corporation

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HAT2165H-EL-E Renesas Electronics Corporation

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Part Life Cycle Code Not Recommended Not Recommended
Ihs Manufacturer RENESAS ELECTRONICS CORP RENESAS ELECTRONICS CORP
Package Description LFPAK-5 SC-100, LFPAK-5
Pin Count 5 5
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 40 A 55 A
Drain-source On Resistance-Max 0.01 Ω 0.0053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4 R-PSSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 20 W 30 W
Pulsed Drain Current-Max (IDM) 160 A 220 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code LFPAK
Manufacturer Package Code PTZZ0005DA
Samacsys Manufacturer Renesas Electronics
JESD-609 Code e4
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Terminal Finish NICKEL PALLADIUM GOLD
Time@Peak Reflow Temperature-Max (s) 20

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