GS8662T18BGD-250I vs K7I641882M-FI25T feature comparison

GS8662T18BGD-250I GSI Technology

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K7I641882M-FI25T Samsung Semiconductor

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Pbfree Code Yes No
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GSI TECHNOLOGY SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40 BGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code compliant unknown
ECCN Code 3A991.B.2.B 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Factory Lead Time 24 Weeks
Access Time-Max 0.45 ns 0.45 ns
Additional Feature PIPELINED ARCHITECTURE, LATE WRITE
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 75497472 bit 75497472 bit
Memory IC Type DDR SRAM STANDARD SRAM
Memory Width 18 18
Moisture Sensitivity Level 3 1
Number of Functions 1
Number of Terminals 165 165
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 4MX18 4MX18
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA BGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm
Standby Voltage-Min 1.7 V 1.7 V
Supply Current-Max 0.435 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Width 13 mm
Base Number Matches 1 1

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Compare K7I641882M-FI25T with alternatives