K7I641882M-FI25T
vs
GS8672T18BGE-250I
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
GSI TECHNOLOGY
Package Description
BGA, BGA165,11X15,40
LBGA, BGA165,11X15,40
Reach Compliance Code
unknown
compliant
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
0.45 ns
0.45 ns
Clock Frequency-Max (fCLK)
250 MHz
250 MHz
I/O Type
COMMON
COMMON
JESD-30 Code
R-PBGA-B165
R-PBGA-B165
Memory Density
75497472 bit
75497472 bit
Memory IC Type
STANDARD SRAM
DDR SRAM
Memory Width
18
18
Moisture Sensitivity Level
1
Number of Terminals
165
165
Number of Words
4194304 words
4194304 words
Number of Words Code
4000000
4000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
4MX18
4MX18
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
BGA
LBGA
Package Equivalence Code
BGA165,11X15,40
BGA165,11X15,40
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY
GRID ARRAY, LOW PROFILE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Voltage-Min
1.7 V
1.7 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
1 mm
1 mm
Terminal Position
BOTTOM
BOTTOM
Base Number Matches
1
1
Part Package Code
BGA
Pin Count
165
Factory Lead Time
12 Weeks
Additional Feature
PIPELINED ARCHITECTURE, LATE WRITE
Length
17 mm
Number of Functions
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Seated Height-Max
1.5 mm
Supply Current-Max
0.82 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
15 mm
Compare K7I641882M-FI25T with alternatives
Compare GS8672T18BGE-250I with alternatives