GS8161E32DD-250 vs MT58V512V32DF-10 feature comparison

GS8161E32DD-250 GSI Technology

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MT58V512V32DF-10 Micron Technology Inc

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Rohs Code No No
Part Life Cycle Code Active Transferred
Ihs Manufacturer GSI TECHNOLOGY MICRON TECHNOLOGY INC
Part Package Code BGA BGA
Package Description LBGA, 13 X 15 MM, FBGA-165
Pin Count 165 165
Reach Compliance Code compliant not_compliant
ECCN Code 3A991.B.2.B 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 5.5 ns 5 ns
Additional Feature FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e0 e0
Length 15 mm 15 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type CACHE SRAM CACHE SRAM
Memory Width 32 32
Number of Functions 1 1
Number of Terminals 165 165
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 512KX32 512KX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA TBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm 1.2 mm
Supply Voltage-Max (Vsup) 2.7 V 2.625 V
Supply Voltage-Min (Vsup) 2.3 V 2.375 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 13 mm 13 mm
Base Number Matches 1 2
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Output Characteristics 3-STATE
Package Equivalence Code BGA165,11X15,40
Standby Current-Max 0.03 A
Standby Voltage-Min 2.38 V
Supply Current-Max 0.21 mA

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Compare MT58V512V32DF-10 with alternatives