GS8161E32DD-200 vs MT58V512V32DF-10 feature comparison

GS8161E32DD-200 GSI Technology

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MT58V512V32DF-10 Cypress Semiconductor

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Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GSI TECHNOLOGY CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA BGA
Package Description LBGA, TBGA,
Pin Count 165 165
Reach Compliance Code compliant compliant
ECCN Code 3A991.B.2.B 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 6.5 ns 5 ns
Additional Feature FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e0 e0
Length 15 mm 15 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type CACHE SRAM CACHE SRAM
Memory Width 32 32
Number of Functions 1 1
Number of Terminals 165 165
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 512KX32 512KX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA TBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm 1.2 mm
Supply Voltage-Max (Vsup) 2.7 V 2.625 V
Supply Voltage-Min (Vsup) 2.3 V 2.375 V
Supply Voltage-Nom (Vsup) 2.5 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Width 13 mm 13 mm
Base Number Matches 1 2
Pbfree Code No
Moisture Sensitivity Level 3

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