GL41G vs F1T4GA1 feature comparison

GL41G Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

F1T4GA1 Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.3 V
JEDEC-95 Code DO-213AB
JESD-30 Code O-PELF-R2 O-PALF-W2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 10 µA
Reverse Test Voltage 400 V
Surface Mount YES NO
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Base Number Matches 1 2
Rohs Code Yes
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Reverse Recovery Time-Max 0.15 µs
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare GL41G with alternatives

Compare F1T4GA1 with alternatives