GFP50N03
vs
PHX2N60
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
GENERAL SEMICONDUCTOR INC
NXP SEMICONDUCTORS
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
600 V
Drain Current-Max (ID)
50 A
2.6 A
Drain-source On Resistance-Max
0.013 Ω
2.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
100 A
10 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Avalanche Energy Rating (Eas)
250 mJ
Compare GFP50N03 with alternatives
Compare PHX2N60 with alternatives