GE1001 vs F1AFS feature comparison

GE1001 Harris Semiconductor

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F1AFS Yangzhou Yangjie Electronics Co Ltd

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer HARRIS SEMICONDUCTOR YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.97 V
JESD-30 Code O-LALF-W2 R-PDSO-F2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Recovery Time-Max 0.035 µs 0.15 µs
Surface Mount NO YES
Terminal Finish TIN LEAD TIN
Terminal Form WIRE FLAT
Terminal Position AXIAL DUAL
Base Number Matches 3 1
Package Description R-PDSO-F2
Additional Feature FREE WHEELING DIODE
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260

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