GE1001
vs
1S50-E
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
RECTRON LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.97 V
|
0.7 V
|
| JESD-30 Code |
O-LALF-W2
|
O-PALF-W2
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
50 V
|
50 V
|
| Reverse Recovery Time-Max |
0.035 µs
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
3
|
1
|
| Package Description |
|
O-PALF-W2
|
| Additional Feature |
|
HIGH RELIABILITY, LOW POWER LOSS
|
| Application |
|
EFFICIENCY
|
| Breakdown Voltage-Min |
|
50 V
|
| Non-rep Pk Forward Current-Max |
|
20 A
|
| Reference Standard |
|
MIL-STD-202E
|
| Reverse Current-Max |
|
200 µA
|
| Reverse Test Voltage |
|
50 V
|
| Technology |
|
SCHOTTKY
|
|
|
|
Compare GE1001 with alternatives
Compare 1S50-E with alternatives