1S50-E vs 1N4933GD1 feature comparison

1S50-E Rectron Semiconductor

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1N4933GD1 Yangzhou Yangjie Electronics Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer RECTRON LTD YANGZHOU YANGJIE ELECTRONICS CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY
Breakdown Voltage-Min 50 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.7 V
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 20 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified
Reference Standard MIL-STD-202E
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 200 µA
Reverse Test Voltage 50 V
Surface Mount NO NO
Technology SCHOTTKY
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
JEDEC-95 Code DO-204AL
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Recovery Time-Max 0.15 µs
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1S50-E with alternatives

Compare 1N4933GD1 with alternatives