GBU603D2G
vs
GBU603X0
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
Package Description |
R-PSFM-T4
|
R-PSFM-T4
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Breakdown Voltage-Min |
200 V
|
200 V
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.1 V
|
1.1 V
|
JESD-30 Code |
R-PSFM-T4
|
R-PSFM-T4
|
JESD-609 Code |
e3
|
e3
|
Non-rep Pk Forward Current-Max |
175 A
|
175 A
|
Number of Elements |
4
|
4
|
Number of Phases |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Output Current-Max |
6 A
|
6 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Reference Standard |
AEC-Q101; UL RECOGNIZED
|
AEC-Q101; UL RECOGNIZED
|
Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
10
|
10
|
Base Number Matches |
1
|
2
|
|
|
|
Compare GBU603D2G with alternatives
Compare GBU603X0 with alternatives