GBU603X0 vs KBU603GT0G feature comparison

GBU603X0 Taiwan Semiconductor

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KBU603GT0G Taiwan Semiconductor

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PSFM-T4 R-PSFM-W4
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 200 V 200 V
Case Connection ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PSFM-T4 R-PSFM-W4
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 175 A 175 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 6 A 6 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101; UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE WIRE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 1

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