GB300AE3
vs
2N4170
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
POST/STUD MOUNT, O-MUPM-D3
|
,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.30.00.80
|
|
| Additional Feature |
ULTRA FAST
|
|
| Case Connection |
ANODE
|
|
| Configuration |
SINGLE
|
|
| DC Gate Trigger Current-Max |
0.2 mA
|
60 mA
|
| JEDEC-95 Code |
TO-59
|
|
| JESD-30 Code |
O-MUPM-D3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
125 °C
|
100 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
POST/STUD MOUNT
|
|
| RMS On-state Current-Max |
9.42 A
|
|
| Repetitive Peak Off-state Voltage |
60 V
|
200 V
|
| Repetitive Peak Reverse Voltage |
60 V
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
SOLDER LUG
|
|
| Terminal Position |
UPPER
|
|
| Trigger Device Type |
SCR
|
SCR
|
| Base Number Matches |
1
|
7
|
| Circuit Commutated Turn-off Time-Nom |
|
15 µs
|
| Critical Rate of Rise of Off-State Voltage-Min |
|
50 V/us
|
| DC Gate Trigger Voltage-Max |
|
2.5 V
|
| Holding Current-Max |
|
60 mA
|
| Leakage Current-Max |
|
2 mA
|
| Non-Repetitive Pk On-state Cur |
|
100 A
|
| On-State Voltage-Max |
|
2 V
|
| On-state Current-Max |
|
8000 A
|
|
|
|
Compare GB300AE3 with alternatives