FQP70N10 vs HUF75339P3 feature comparison

FQP70N10 Fairchild Semiconductor Corporation

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HUF75339P3 Harris Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP HARRIS SEMICONDUCTOR
Part Package Code TO-220
Package Description TO-220, 3 PIN
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 1300 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 55 V
Drain Current-Max (ID) 57 A 70 A
Drain-source On Resistance-Max 0.023 Ω 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 160 W 124 W
Pulsed Drain Current-Max (IDM) 228 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 5
Case Connection DRAIN
Power Dissipation Ambient-Max 124 W
Turn-off Time-Max (toff) 70 ns
Turn-on Time-Max (ton) 110 ns

Compare FQP70N10 with alternatives

Compare HUF75339P3 with alternatives