FQP19N10L
vs
STH8NA80FI
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
STMICROELECTRONICS
|
Part Package Code |
TO-220AB
|
|
Package Description |
TO-220, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
Avalanche Energy Rating (Eas) |
220 mJ
|
260 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
800 V
|
Drain Current-Max (ID) |
19 A
|
4.5 A
|
Drain-source On Resistance-Max |
0.11 Ω
|
1.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
NOT APPLICABLE
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT APPLICABLE
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
76 A
|
28.8 A
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT APPLICABLE
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
ECCN Code |
|
EAR99
|
Case Connection |
|
ISOLATED
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
70 W
|
|
|
|
Compare FQP19N10L with alternatives
Compare STH8NA80FI with alternatives