Datasheets
FQP19N10L by:

19A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Details for FQP19N10L by Rochester Electronics LLC

Overview of FQP19N10L by Rochester Electronics LLC

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Part Details for FQP19N10L

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FQP19N10L Part Data Attributes

FQP19N10L Rochester Electronics LLC
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FQP19N10L Rochester Electronics LLC 19A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 220 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 76 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP19N10L

This table gives cross-reference parts and alternative options found for FQP19N10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP19N10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFBE32 International Rectifier Check for Price Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB FQP19N10L vs IRFBE32
SFP9Z34 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN FQP19N10L vs SFP9Z34
BUZ100SE3045A Rochester Electronics LLC Check for Price 77A, 55V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN FQP19N10L vs BUZ100SE3045A
SSF8N90A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 5.5A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN FQP19N10L vs SSF8N90A
FQPF7N20 Rochester Electronics LLC Check for Price 4.8A, 200V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN FQP19N10L vs FQPF7N20
FQB6N40C Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 FQP19N10L vs FQB6N40C
IRLI3803 International Rectifier Check for Price Power Field-Effect Transistor, 76A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 FQP19N10L vs IRLI3803
SPP16N50C3 Rochester Electronics LLC Check for Price 16A, 500V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN FQP19N10L vs SPP16N50C3
IRF623R Rochester Electronics LLC Check for Price 4A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB FQP19N10L vs IRF623R
FQPF6N40CT Rochester Electronics LLC Check for Price 6A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN FQP19N10L vs FQPF6N40CT

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