FQP19N10L vs SSH7N90A feature comparison

FQP19N10L Rochester Electronics LLC

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SSH7N90A Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-220AB TO-3P
Package Description TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 220 mJ 778 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 900 V
Drain Current-Max (ID) 19 A 7 A
Drain-source On Resistance-Max 0.11 Ω 1.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 76 A 28 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 90 pF
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 240 W
Power Dissipation-Max (Abs) 240 W
Turn-off Time-Max (toff) 345 ns
Turn-on Time-Max (ton) 145 ns

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