FQP13N06 vs IRF831R feature comparison

FQP13N06 Rochester Electronics LLC

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IRF831R Harris Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC HARRIS SEMICONDUCTOR
Part Package Code TO-220AB
Package Description TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown unknown
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 85 mJ 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 450 V
Drain Current-Max (ID) 13 A 4.5 A
Drain-source On Resistance-Max 0.135 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 52 A 18 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Turn-off Time-Max (toff) 76 ns
Turn-on Time-Max (ton) 40 ns

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