Part Details for FQP13N06 by Rochester Electronics LLC
Overview of FQP13N06 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQP13N06
FQP13N06 CAD Models
FQP13N06 Part Data Attributes
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FQP13N06
Rochester Electronics LLC
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Datasheet
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FQP13N06
Rochester Electronics LLC
13A, 60V, 0.135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 85 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | NOT APPLICABLE | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 52 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQP13N06
This table gives cross-reference parts and alternative options found for FQP13N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP13N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NTD4857NT4G | 12A, 25V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3 | Rochester Electronics LLC | FQP13N06 vs NTD4857NT4G |
2SJ660 | Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN | SANYO Electric Co Ltd | FQP13N06 vs 2SJ660 |
IRF450 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | FQP13N06 vs IRF450 |
IRF740R | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | FQP13N06 vs IRF740R |
SSF7N80A | Power Field-Effect Transistor, 5A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Samsung Semiconductor | FQP13N06 vs SSF7N80A |
IRF1405ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | FQP13N06 vs IRF1405ZS |
FQP9N50 | 9A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | FQP13N06 vs FQP9N50 |
FDB8878 | 48A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT PACKAGE-3 | Rochester Electronics LLC | FQP13N06 vs FDB8878 |
FQA7N80 | 7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Rochester Electronics LLC | FQP13N06 vs FQA7N80 |
SPP08P06P | 8.8A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Rochester Electronics LLC | FQP13N06 vs SPP08P06P |