FQH44N10-F133
vs
MTH40N10
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
End Of Life
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
MOTOROLA INC
|
Part Package Code |
TO-247 3L
|
|
Package Description |
TO-247AB, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Manufacturer Package Code |
340CK
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
onsemi
|
|
Avalanche Energy Rating (Eas) |
530 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
48 A
|
40 A
|
Drain-source On Resistance-Max |
0.039 Ω
|
0.04 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-247AB
|
TO-218AC
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
180 W
|
|
Pulsed Drain Current-Max (IDM) |
192 A
|
120 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Rohs Code |
|
No
|
HTS Code |
|
8541.29.00.95
|
Feedback Cap-Max (Crss) |
|
1000 pF
|
Power Dissipation Ambient-Max |
|
150 W
|
Turn-off Time-Max (toff) |
|
690 ns
|
Turn-on Time-Max (ton) |
|
430 ns
|
|
|
|
Compare FQH44N10-F133 with alternatives
Compare MTH40N10 with alternatives