FQB8N60CTM
vs
NTB10N60T4
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ON SEMICONDUCTOR
|
Part Package Code |
D2PAK
|
|
Package Description |
ROHS COMPLIANT, D2PAK-3
|
D2PAK-3
|
Pin Count |
2
|
3
|
Manufacturer Package Code |
2LD,TO263, SURFACE MOUNT
|
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Avalanche Energy Rating (Eas) |
230 mJ
|
500 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
7.5 A
|
10 A
|
Drain-source On Resistance-Max |
1.2 Ω
|
0.75 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
245
|
235
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
147 W
|
201 W
|
Pulsed Drain Current-Max (IDM) |
30 A
|
35 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
|
|
|
Compare FQB8N60CTM with alternatives
Compare NTB10N60T4 with alternatives