FQB8N60CTM vs 2SK3930-01S feature comparison

FQB8N60CTM Fairchild Semiconductor Corporation

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2SK3930-01S Fuji Electric Co Ltd

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP FUJI ELECTRIC CO LTD
Part Package Code D2PAK
Package Description ROHS COMPLIANT, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 230 mJ 439.1 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 7.5 A 11 A
Drain-source On Resistance-Max 1.2 Ω 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 147 W 195 W
Pulsed Drain Current-Max (IDM) 30 A 44 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1

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Compare 2SK3930-01S with alternatives