FQB5N60C
vs
FQB4N60
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
D2PAK-3
Pin Count
3
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
FAST SWITCHING
Avalanche Energy Rating (Eas)
210 mJ
260 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
4.5 A
4.4 A
Drain-source On Resistance-Max
2.5 Ω
2.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
100 W
3.13 W
Pulsed Drain Current-Max (IDM)
18 A
17.6 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Part Package Code
TO-263
JEDEC-95 Code
TO-263AB
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare FQB5N60C with alternatives
Compare FQB4N60 with alternatives