FQB4N60 vs STB7NB60T4 feature comparison

FQB4N60 Fairchild Semiconductor Corporation

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STB7NB60T4 STMicroelectronics

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP STMICROELECTRONICS
Part Package Code TO-263 TO-252AA
Package Description D2PAK-3 TO-252, D2PAK-3
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 260 mJ 580 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 4.4 A 7.2 A
Drain-source On Resistance-Max 2.2 Ω 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 3.13 W 125 W
Pulsed Drain Current-Max (IDM) 17.6 A 28.8 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Moisture Sensitivity Level 1

Compare FQB4N60 with alternatives

Compare STB7NB60T4 with alternatives