FF200R12KT3EHOSA1
vs
APTGF200A120D3G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Not Recommended
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MICROSEMI CORP
|
| Package Description |
MODULE-7
|
ROHS COMPLIANT, D3, 11 PIN
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
16 Weeks
|
|
| Samacsys Manufacturer |
Infineon
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
580 A
|
300 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
| JESD-30 Code |
R-XUFM-X7
|
R-XUFM-X11
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
7
|
11
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Reference Standard |
UL RECOGNIZED
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
680 ns
|
590 ns
|
| Turn-on Time-Nom (ton) |
215 ns
|
180 ns
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Pin Count |
|
11
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| JESD-609 Code |
|
e1
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
1400 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN SILVER COPPER
|
| VCEsat-Max |
|
3.7 V
|
|
|
|
Compare FF200R12KT3EHOSA1 with alternatives
Compare APTGF200A120D3G with alternatives