FDS7760AS62Z
vs
FDS6670A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
ONSEMI
Part Package Code
SOT
SOIC-8
Package Description
SMALL OUTLINE, R-PDSO-G8
SOP-8
Pin Count
8
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
kg CO2e/kg
8.8
Average Weight (mg)
66.775
CO2e (mg)
587.62
Category CO2 Kg
8.8
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
15 A
13 A
Drain-source On Resistance-Max
0.0055 Ω
0.008 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Manufacturer Package Code
751EB
HTS Code
8541.29.00.95
Factory Lead Time
12 Weeks
Samacsys Manufacturer
onsemi
Additional Feature
LOGIC LEVEL COMPATIBLE
Feedback Cap-Max (Crss)
200 pF
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
1 W
Power Dissipation-Max (Abs)
2.5 W
Pulsed Drain Current-Max (IDM)
50 A
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Turn-off Time-Max (toff)
88 ns
Turn-on Time-Max (ton)
43 ns
Compare FDS7760AS62Z with alternatives
Compare FDS6670A with alternatives