FDS6990A
vs
SI3457BDV-T1-E3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
VISHAY SILICONIX
Part Package Code
SOIC
TSOP
Package Description
SO-8
SMALL OUTLINE, R-PDSO-G6
Pin Count
8
6
Manufacturer Package Code
8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
7.5 A
3.7 A
Drain-source On Resistance-Max
0.018 Ω
0.054 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
1
Number of Terminals
8
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
2 W
2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
2
Compare FDS6990A with alternatives
Compare SI3457BDV-T1-E3 with alternatives