FDS3580 vs FDS3580 feature comparison

FDS3580 Rochester Electronics LLC

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FDS3580 onsemi

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Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ONSEMI
Part Package Code SOT
Package Description SOIC-8 SOIC-8
Pin Count 8
Reach Compliance Code unknown compliant
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 80 V
Drain Current-Max (ID) 7.6 A 7.6 A
Drain-source On Resistance-Max 0.029 Ω 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Manufacturer Package Code 751EB
ECCN Code EAR99
Samacsys Manufacturer onsemi
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 2.5 W

Compare FDS3580 with alternatives

Compare FDS3580 with alternatives