FDN327NS62Z
vs
SI2302DS,215
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
NXP SEMICONDUCTORS
Part Package Code
SOT
TO-236
Package Description
SMALL OUTLINE, R-PDSO-G3
MINIATURE, PLASTIC PACKAGE-3
Pin Count
3
3
Manufacturer Package Code
SUPERSOT
SOT23
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
2 A
2.5 A
Drain-source On Resistance-Max
0.07 Ω
0.085 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
HTS Code
8541.29.00.75
Samacsys Manufacturer
NXP
Additional Feature
LOGIC LEVEL COMPATIBLE
JEDEC-95 Code
TO-236AB
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
0.83 W
Terminal Finish
TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare FDN327NS62Z with alternatives
Compare SI2302DS,215 with alternatives