SI2302DS,215
vs
AP2322GN
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Contact Manufacturer
Ihs Manufacturer
NXP SEMICONDUCTORS
ADVANCED POWER ELECTRONICS CORP
Part Package Code
TO-236
Package Description
MINIATURE, PLASTIC PACKAGE-3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
3
Manufacturer Package Code
SOT23
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.75
Samacsys Manufacturer
NXP
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
2.5 A
2.5 A
Drain-source On Resistance-Max
0.085 Ω
0.09 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.83 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Compare SI2302DS,215 with alternatives
Compare AP2322GN with alternatives