Datasheets
FDD6690A by:

N-Channel PowerTrench® MOSFET, 30V, 46A, 12mΩ, 2500-REEL

Part Details for FDD6690A by onsemi

Overview of FDD6690A by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDD6690A

Part # Distributor Description Stock Price Buy
DISTI # 25M9451
Newark Mosfet Transistor, N Channel, 46 A, 30 V, 0.0077 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDD6690A Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
Bristol Electronics   3482
RFQ
DISTI # 9845062
element14 Asia-Pacific MOSFET, N, D-PAK RoHS: Compliant Min Qty: 5 Container: Cut Tape 2336
  • 5 $1.1303
  • 10 $0.9234
  • 100 $0.7196
  • 500 $0.4964
  • 2,500 $0.4447
  • 7,500 $0.4381
  • 20,000 $0.4314
  • 37,500 $0.4300
$0.4300 / $1.1303 Buy Now
DISTI # 9845062RL
Farnell MOSFET, N, D-PAK RoHS: Compliant Min Qty: 100 Lead time: 21 Weeks, 4 Days Container: Reel 1
  • 100 $0.6809
  • 500 $0.4706
  • 2,500 $0.4419
$0.4419 / $0.6809 Buy Now
DISTI # 9845062
Farnell MOSFET, N, D-PAK RoHS: Compliant Min Qty: 1 Lead time: 21 Weeks, 4 Days Container: Cut Tape 1
  • 1 $1.2229
  • 10 $0.9463
  • 100 $0.6809
  • 500 $0.4706
  • 2,500 $0.4419
$0.4419 / $1.2229 Buy Now

Part Details for FDD6690A

FDD6690A CAD Models

FDD6690A Part Data Attributes:

FDD6690A onsemi
Buy Now Datasheet
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FDD6690A onsemi N-Channel PowerTrench® MOSFET, 30V, 46A, 12mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 180 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD6690A

This table gives cross-reference parts and alternative options found for FDD6690A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6690A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDD6690A Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD6690A vs FDD6690A
FDD6690A_NL Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD6690A vs FDD6690A_NL
Part Number Description Manufacturer Compare
NTD4913NT4G Power MOSFET 30V 32A 10.5 mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL onsemi FDD6690A vs NTD4913NT4G
NVD4810NT4G-VF01 Single N-Channel Power MOSFET 30V, 54A, 10mΩ, 2500-REEL, Automotive Qualified onsemi FDD6690A vs NVD4810NT4G-VF01
NTD4865NT4G Power MOSFET 25V 44A 10.9 mOhm Single N Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL onsemi FDD6690A vs NTD4865NT4G
NVD4804NT4G Power MOSFET 30V, 117A, 4 mOhm, Single N-Channel, DPAK, Logic Level. Power MOSFET 30V 117A 4 mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL, Automotive Qualified onsemi FDD6690A vs NVD4804NT4G
NTD60N02R-001 32A, 24V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 onsemi FDD6690A vs NTD60N02R-001
BSF053N03LTGXUSA1 Power Field-Effect Transistor, 16A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN Infineon Technologies AG FDD6690A vs BSF053N03LTGXUSA1
BSZ0506NS Power Field-Effect Transistor, 15A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8FL, 8 PIN Infineon Technologies AG FDD6690A vs BSZ0506NS
NTD50N03RT4G Power MOSFET 25 V, 45 A, Single N-Channel, DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL onsemi FDD6690A vs NTD50N03RT4G
NTD60N02R-1 32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 onsemi FDD6690A vs NTD60N02R-1
NTD50N03RG Power MOSFET 25 V, 45 A, Single N-Channel, DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 75-TUBE onsemi FDD6690A vs NTD50N03RG

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