FDD5612 vs IRF9Z34STRLPBF feature comparison

FDD5612 Fairchild Semiconductor Corporation

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IRF9Z34STRLPBF International Rectifier

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INTERNATIONAL RECTIFIER CORP
Part Package Code DPAK D2PAK
Package Description DPAK-3 TO-263, 3 PIN
Pin Count 3 4
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 90 mJ 370 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 18 A 18 A
Drain-source On Resistance-Max 0.055 Ω 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 36 W 88 W
Pulsed Drain Current-Max (IDM) 100 A 72 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Power Dissipation Ambient-Max 88 W

Compare FDD5612 with alternatives

Compare IRF9Z34STRLPBF with alternatives