FDC602PD87Z
vs
SI3469DV-T1-GE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
End Of Life
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
VISHAY SILICONIX
Part Package Code
SOT
TSOP
Package Description
SMALL OUTLINE, R-PDSO-G6
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
6
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
5.5 A
5 A
Drain-source On Resistance-Max
0.033 Ω
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
JEDEC-95 Code
MO-193AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
1.14 W
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare FDC602PD87Z with alternatives
Compare SI3469DV-T1-GE3 with alternatives