Part Details for SI3469DV-T1-GE3 by Vishay Siliconix
Overview of SI3469DV-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Smart Cities
Electronic Manufacturing
Price & Stock for SI3469DV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
SI3469DV-T1-GE3CT-ND
|
DigiKey | MOSFET P-CH 20V 5A 6TSOP Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
15 In Stock |
|
$0.3875 / $1.6100 | Buy Now |
Part Details for SI3469DV-T1-GE3
SI3469DV-T1-GE3 CAD Models
SI3469DV-T1-GE3 Part Data Attributes
|
|
SI3469DV-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SI3469DV-T1-GE3
Vishay Siliconix
P-CH MOSFET TSOP-6 20V 30MOHM @ 10V - Tape and Reel
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.14 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI3469DV-T1-GE3
This table gives cross-reference parts and alternative options found for SI3469DV-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3469DV-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI3445DV_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | SI3469DV-T1-GE3 vs SI3445DV_NL |
| SI3445DVS62Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | SI3469DV-T1-GE3 vs SI3445DVS62Z |
| FDC602P | Rochester Electronics LLC | Check for Price | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6 | SI3469DV-T1-GE3 vs FDC602P |
| SI3445DV | Rochester Electronics LLC | Check for Price | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | SI3469DV-T1-GE3 vs SI3445DV |
| SI3469DV-T1-E3 | Vishay Intertechnologies | $0.7390 | Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6 | SI3469DV-T1-GE3 vs SI3469DV-T1-E3 |
| FDC604P | Rochester Electronics LLC | Check for Price | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | SI3469DV-T1-GE3 vs FDC604P |
| FDC604P | onsemi | $0.2571 | P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, TSOT-23-6, 3000-REEL | SI3469DV-T1-GE3 vs FDC604P |