FB10R06KL4
vs
FB20R06W1E3B11HOMA1
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
MODULE
|
|
| Package Description |
MODULE-17
|
,
|
| Pin Count |
17
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
16 A
|
29 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
|
COMPLEX
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JESD-30 Code |
R-XUFM-X17
|
R-XUFM-X22
|
| Number of Elements |
6
|
7
|
| Number of Terminals |
17
|
22
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
55 W
|
94 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
260 ns
|
250 ns
|
| Turn-on Time-Nom (ton) |
60 ns
|
37 ns
|
| VCEsat-Max |
2.55 V
|
2 V
|
| Base Number Matches |
5
|
1
|
| Factory Lead Time |
|
60 Weeks
|
| Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
| Operating Temperature-Min |
|
-40 °C
|
| Reference Standard |
|
UL APPROVED
|
| Transistor Application |
|
POWER CONTROL
|
|
|
|
Compare FB10R06KL4 with alternatives
Compare FB20R06W1E3B11HOMA1 with alternatives