Part Details for FB20R06W1E3B11HOMA1 by Infineon Technologies AG
Overview of FB20R06W1E3B11HOMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FB20R06W1E3B11HOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-FB20R06W1E3B11HOMA1-ND
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DigiKey | IGBT MODULE 600V 29A 94W Lead time: 12 Weeks Container: Tray | Limited Supply - Call |
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Buy Now | |
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Ameya Holding Limited | 7 |
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RFQ | ||
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DISTI #
SP001000984
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EBV Elektronik | Trans IGBT Module N-CH 600V 29A 22-pin EASY1B-2 (Alt: SP001000984) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 10 Weeks, 1 Days | EBV - 0 |
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Buy Now |
Part Details for FB20R06W1E3B11HOMA1
FB20R06W1E3B11HOMA1 CAD Models
FB20R06W1E3B11HOMA1 Part Data Attributes:
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FB20R06W1E3B11HOMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FB20R06W1E3B11HOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 60 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 29 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X22 | |
| Number of Elements | 7 | |
| Number of Terminals | 22 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 94 W | |
| Reference Standard | UL APPROVED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 250 ns | |
| Turn-on Time-Nom (ton) | 37 ns | |
| VCEsat-Max | 2 V |
Alternate Parts for FB20R06W1E3B11HOMA1
This table gives cross-reference parts and alternative options found for FB20R06W1E3B11HOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FB20R06W1E3B11HOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FB20R06W1E3B1BOMA1 | Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, MODULE-26 | Infineon Technologies AG | FB20R06W1E3B11HOMA1 vs FB20R06W1E3B1BOMA1 |
| FB20R06W1E3_B11 | Insulated Gate Bipolar Transistor | Infineon Technologies AG | FB20R06W1E3B11HOMA1 vs FB20R06W1E3_B11 |
| FB20R06W1E3 | Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, MODULE-23 | Infineon Technologies AG | FB20R06W1E3B11HOMA1 vs FB20R06W1E3 |
| FB20R06W1E3_B1 | Insulated Gate Bipolar Transistor, 29A I(C), 600V V(BR)CES, N-Channel, MODULE-26 | Infineon Technologies AG | FB20R06W1E3B11HOMA1 vs FB20R06W1E3_B1 |